cover
- Published: December 2025
- Pages: 645
- Tables: 63
- Figures: 76
Power electronics is no longer confined to specialist applications. Its influence now spans electric vehicles, renewable energy systems, industrial automation, data-centre infrastructure and advanced consumer equipment. What links these sectors is the need to move energy more efficiently and at higher power densities.
The global power electronics market is experiencing unprecedented growth and transformation, driven by the electrification of transportation, renewable energy expansion, and surging demand for data center infrastructure. This dynamic sector encompasses the critical components that convert and control electrical power across virtually every modern application, from electric vehicle powertrains to grid-scale energy storage systems. At the heart of this market evolution is a fundamental technology transition from traditional silicon-based devices to wide bandgap (WBG) semiconductors, specifically silicon carbide (SiC) and gallium nitride (GaN). This paradigm shift represents the most significant advancement in power electronics since the introduction of IGBTs in the 1980s. SiC MOSFETs offer compelling advantages over silicon IGBTs, including higher temperature operation, superior thermal conductivity, switching speeds up to five times faster, and the potential to increase electric vehicle range by approximately 7%. These characteristics enable more compact, efficient power conversion systems with smaller passive components and reduced cooling requirements.
The electric vehicle sector stands as the primary growth driver for power electronics demand. Key components include traction inverters, onboard chargers (OBCs), and DC-DC converters, with the market increasingly adopting 800V architectures to enable faster charging and improved efficiency. SiC MOSFETs are rapidly gaining market share in EV inverters, with projections indicating they will become the majority technology by 2035. Meanwhile, GaN devices are making significant inroads in lower-power applications such as onboard chargers and DC-DC converters, where their high-frequency switching capabilities enable dramatic reductions in size and weight.
The supply chain for power electronics is undergoing significant restructuring, with vertical integration emerging as a key strategic trend. Major automotive OEMs and semiconductor suppliers are securing supply through acquisitions, partnerships, and in-house development of SiC capabilities. The transition from 150mm to 200mm SiC wafers represents a critical milestone that will substantially increase production capacity and reduce costs, with multiple suppliers worldwide scaling up 200mm wafer production. Chinese manufacturers have entered the market aggressively, with four Chinese companies now ranking among the top 20 global power device suppliers.
Data centers represent another rapidly expanding application, driven by artificial intelligence workloads that demand unprecedented power levels. Power supply units are evolving to meet stringent efficiency standards, with the 80 PLUS Ruby certification requiring up to 96.5% efficiency. Wide bandgap adoption is accelerating in this sector, with hybrid designs combining silicon, SiC, and GaN emerging as the preferred approach for maximizing efficiency across different power conversion stages.
The industry is also witnessing a conceptual evolution from discrete converter design toward integrated system-level approaches. This "Power Electronics 2.0" paradigm emphasizes energy management over simple power conversion, incorporating smart grid integration, distributed control architectures, and mission-oriented efficiency metrics. Multi-cell converter architectures are gaining traction, offering advantages including switching frequency multiplication, improved redundancy, and standardization benefits.
Despite the rapid advancement of WBG technologies, silicon devices continue to hold significant market share due to their maturity, established supply chains, and cost advantages. The market is characterized by intense cost pressure, particularly in price-sensitive segments like solar inverters and battery energy storage systems. Looking forward, the global power electronics market is projected to grow with a compound annual growth rate exceeding 8%, adding more than $15 billion in market value by 2030, driven by the continued expansion of electric mobility, renewable energy deployment, and digital infrastructure requirements.
The Global Power Electronics Market 2026-2036 provides comprehensive analysis of the rapidly evolving power semiconductor industry, examining the transformative shift from silicon-based devices to wide bandgap (WBG) technologies including silicon carbide (SiC) MOSFETs and gallium nitride (GaN) HEMTs. This in-depth market intelligence report delivers granular 10-year forecasts covering market size in US dollars and gigawatts across key segments including electric vehicle inverters, onboard chargers, DC-DC converters, data center power supply units, renewable energy systems, and industrial applications.
The report analyzes critical technology trends driving market growth, including the transition from 400V to 800V EV architectures, the evolution from 150mm to 200mm SiC wafer production, and the emergence of integrated power electronics modules. Detailed supply chain analysis covers the complete value chain from raw materials and wafer production through device manufacturing, packaging, and system integration, with particular focus on vertical integration strategies and the rising influence of Chinese manufacturers in the global market.
Regional market analysis examines growth dynamics across China, Europe, North America, Japan, South Korea, and emerging markets, while competitive landscape assessment provides market share rankings, M&A activity tracking, and strategic partnership analysis. The report includes over 90 detailed company profiles spanning semiconductor device manufacturers, GaN specialists, SiC wafer suppliers, tier-1 automotive suppliers, automotive OEMs, and system integrators.
Report Contents include:
- Market Analysis & Forecasts
- Global power electronics market size and 10-year growth projections (2026-2036)
- Device-level forecasts for Si IGBTs, SiC MOSFETs, and GaN devices by voltage class
- Application-level forecasts for EV inverters, onboard chargers, and DC-DC converters in units, GW, and US$
- Regional market forecasts for China, Europe, North America, and Asia-Pacific
- Price trend analysis and cost reduction projections for WBG semiconductors
- Technology Analysis
- Comprehensive comparison of Si, SiC, and GaN semiconductor properties and performance
- Technology S-curve analysis and paradigm shift to Power Electronics 2.0
- Multi-cell converter architectures including parallel and series interleaving
- Packaging evolution including single-sided and double-sided cooling technologies
- 150mm to 200mm SiC wafer transition timeline and cost advantages
- Application Markets
- Electric vehicle power electronics including 400V vs 800V architecture analysis
- Traction inverter, onboard charger, and DC-DC converter technology benchmarking
- Data center PSU market including AI server power requirements
- Renewable energy applications covering solar PV, wind, and battery energy storage
- Grid infrastructure including smart grid, solid-state transformers, and HVDC systems
- Supply Chain Analysis
- Complete Si, SiC, and GaN supply chain mapping from raw materials to end applications
- SiC wafer supplier market share and 200mm production roadmap
- Vertical integration trends and OEM acquisition strategies
- Packaging and assembly supply chain including die attach technologies
- Passive component technology roadmap for capacitors and magnetics
- Competitive Landscape
- Top 20 power device supplier rankings and market share analysis
- Recent mergers, acquisitions, and strategic partnerships
- Manufacturing capacity expansion plans by region and technology
- OEM-supplier relationship mapping for SiC MOSFETs and Si IGBTs
- Future Technology Trends
- Power Electronics 2.0 vision: from converters to systems
- SiC and GaN technology roadmaps through 2035
- Emerging WBG materials including Ga₂O₃ and diamond
- Virtual prototyping and digital twin design methodologies
Companies Profiled include:
ABB, Advanced Electric Machines, Advanced Energy Industries, AMETS Power Electronics. BMW, Bosch, BorgWarner, BYD, Cambridge GaN Devices, Coherent (II-VI), Continental, CR Micro, CRRC Corporation, Dana Incorporated, Delta Electronics, Denso, Diamond Foundry, Diodes Incorporated, Dynex Semiconductor, Eaton, Efficient Power Conversion (EPC), Equipmake, Fuji Electric, GaN Systems, General Motors, Helix Technologies, Hitachi Astemo, Hitachi Energy, Huawei, Hyundai Motor Group, Infineon Technologies and more....
Chapter 1: EXECUTIVE SUMMARY 1
- 1.1 Report Introduction and Scope 1
- 1.2 Key Findings and Market Highlights 3
- 1.3 Global Power Electronics Market Overview 2026-2036 5
- 1.4 Technology Evolution: From Silicon to Wide Bandgap 7
- 1.5 Market Size and Growth Projections Summary 9
- 1.6 Regional Market Analysis Overview 11
- 1.7 Key Market Drivers and Challenges 13
- 1.8 Strategic Recommendations 15
Chapter 2: MARKET OVERVIEW AND DEFINITIONS 17
- 2.1 Power Electronics Fundamentals 17
- 2.1.1 What is Power Electronics? 17
- 2.1.2 Key Applications and End Markets 19
- 2.1.3 Power Conversion Technologies Overview 21
- 2.2 Market Segmentation Framework 23
- 2.2.1 By Product Type (Inverters, Converters, Rectifiers) 23
- 2.2.2 By Semiconductor Material (Si, SiC, GaN) 25
- 2.2.3 By Application Sector 27
- 2.2.4 By Voltage Class 29
- 2.3 Performance Indices and Metrics 31
- 2.3.1 Power Density (kW/dm³) 31
- 2.3.2 Efficiency and Loss Analysis 33
- 2.3.3 Cost per kW Trends 35
- 2.3.4 Reliability and Failure Rate Metrics 37
Chapter 3: TECHNOLOGY ANALYSIS 39
- 3.1 Evolution of Power Electronics Technology 39
- 3.1.1 Historical Development: SCRs to WBG 39
- 3.1.2 Technology S-Curve Analysis 41
- 3.1.3 Paradigm Shift to Power Electronics 2.0 43
- 3.2 Silicon-Based Power Devices 45
- 3.2.1 Silicon IGBT Technology and Performance 45
- 3.2.2 Silicon MOSFET Applications 47
- 3.2.3 Super-Junction Technology Advances 49
- 3.2.4 Si Device Roadmap and Limitations 51
- 3.3 Silicon Carbide (SiC) Technology 53
- 3.3.1 SiC Material Properties and Advantages 53
- 3.3.2 SiC MOSFET Technology Development 55
- 3.3.3 SiC vs Si IGBT Performance Comparison 57
- 3.3.4 SiC Device Packaging Evolution 59
- 3.3.5 150mm to 200mm Wafer Transition 61
- 3.3.6 SiC Cost Reduction Roadmap 63
- 3.4 Gallium Nitride (GaN) Technology 65
- 3.4.1 GaN Material Properties and Potential 65
- 3.4.2 GaN HEMT and FET Technologies 67
- 3.4.3 GaN-on-Si vs Alternative Substrates 69
- 3.4.4 GaN Voltage Limitations and Solutions 71
- 3.4.5 GaN Device Roadmap for Automotive 73
- 3.5 Converter Topology Analysis 75
- 3.5.1 Multi-Cell Converter Architectures 75
- 3.5.2 Parallel and Series Interleaving 77
- 3.5.3 DC-Transformer Concepts 79
- 3.5.4 Three-Level Inverter Designs 81
- 3.6 Packaging and Thermal Management 83
- 3.6.1 Power Module Packaging Evolution 83
- 3.6.2 Single-Sided vs Double-Sided Cooling 85
- 3.6.3 Thermal Interface Materials (TIM) 87
- 3.6.4 Advanced Packaging Technologies (P4, p²pack) 89
Chapter 4: APPLICATION MARKETS ANALYSIS 91
- 4.1 Electric Vehicles (EVs) 91
- 4.1.1 EV Market Overview and Growth Trends 91
- 4.1.2 Traction Inverter Technologies 93
- 4.1.3 Onboard Charger (OBC) Systems 95
- 4.1.4 DC-DC Converter Requirements 97
- 4.1.5 400V vs 800V Architecture Analysis 99
- 4.1.6 Power Electronics Integration Trends 101
- 4.1.7 Heavy-Duty Vehicle Applications 103
- 4.2 Renewable Energy 105
- 4.2.1 Solar PV Inverter Market 105
- 4.2.2 Wind Power Converters 107
- 4.2.3 Battery Energy Storage Systems (BESS) 109
- 4.3 Industrial Applications 111
- 4.3.1 Motor Drives and Variable Frequency Drives 111
- 4.3.2 Industrial Power Supplies 113
- 4.3.3 Welding and Process Equipment 115
- 4.4 Data Centers and Computing 117
- 4.4.1 Power Supply Unit (PSU) Market 117
- 4.4.2 AI Server Power Requirements 119
- 4.4.3 48V to 400V Architecture Transition 121
- 4.4.4 UPS and Backup Power Systems 123
- 4.5 Grid Infrastructure 125
- 4.5.1 Smart Grid and Energy Management 125
- 4.5.2 Solid-State Transformers 127
- 4.5.3 HVDC Transmission Systems 129
- 4.6 Consumer Electronics and Telecommunications 131
- 4.6.1 Fast Charging Technologies 131
- 4.6.2 Telecom Power Systems 133
Chapter 5: REGIONAL MARKET ANALYSIS 135
- 5.1 China 135
- 5.1.1 Market Size and Growth 135
- 5.1.2 Domestic Manufacturing Expansion 137
- 5.1.3 SiC Wafer Production Scale-up 139
- 5.1.4 Key Chinese Players Analysis 141
- 5.2 Europe 143
- 5.2.1 Market Overview and Regulations 143
- 5.2.2 EU Emissions Targets Impact 145
- 5.2.3 European Semiconductor Initiatives 147
- 5.3 United States 149
- 5.3.1 Market Trends and Policy Drivers 149
- 5.3.2 CHIPS Act and Manufacturing Incentives 151
- 5.3.3 US-Based Supply Chain Analysis 153
- 5.4 Japan and South Korea 155
- 5.4.1 Technology Leadership Positions 155
- 5.4.2 Automotive OEM Strategies 157
- 5.5 Rest of World 159
- 5.5.1 India Market Potential 159
- 5.5.2 Southeast Asia Manufacturing Hub 161
Chapter 6: SUPPLY CHAIN ANALYSIS 163
- 6.1 Silicon Supply Chain 163
- 6.1.1 Si Wafer Suppliers 163
- 6.1.2 Si IGBT Production Flow 165
- 6.1.3 Market Shares and Capacity 167
- 6.2 SiC Supply Chain 169
- 6.2.1 SiC Raw Materials to Wafers 169
- 6.2.2 SiC Wafer Suppliers Global Analysis 171
- 6.2.3 SiC MOSFET Manufacturing Process 173
- 6.2.4 200mm SiC Wafer Production Roadmap 175
- 6.2.5 Vertical Integration Trends 177
- 6.3 GaN Supply Chain 179
- 6.3.1 GaN Substrate Options and Suppliers 179
- 6.3.2 GaN Device Manufacturing 181
- 6.3.3 GaN vs Si Manufacturing Comparison 183
- 6.4 Packaging and Assembly 185
- 6.4.1 Power Module Packaging Supply Chain 185
- 6.4.2 Die Attach Technologies 187
- 6.4.3 OSAT Providers Analysis 189
- 6.5 Passive Components 191
- 6.5.1 Capacitor Supply Chain 191
- 6.5.2 Magnetic Components 193
- 6.5.3 Expected Technology Progress 195
- 6.6 Supply Chain Challenges 197
- 6.6.1 Chip Shortage Impact Analysis 197
- 6.6.2 Geopolitical Considerations 199
- 6.6.3 Multi-sourcing Strategies 201
Chapter 7: MARKET FORECASTS 2026-2036 203
- 7.1 Global Market Overview 203
- 7.1.1 Total Market Size (US$ Billion) 203
- 7.1.2 Market Growth by Segment 205
- 7.1.3 CAGR Analysis by Technology 207
- 7.2 Device-Level Forecasts 209
- 7.2.1 Si IGBT Market Forecast 209
- 7.2.2 SiC MOSFET Market Forecast 211
- 7.2.3 GaN Device Market Forecast 213
- 7.2.4 Market Share Transitions: Si vs SiC vs GaN 215
- 7.3 Application-Level Forecasts 217
- 7.3.1 EV Inverter Forecast (Units, GW, US$) 217
- 7.3.2 Onboard Charger Forecast 219
- 7.3.3 DC-DC Converter Forecast 221
- 7.3.4 Data Center PSU Forecast 223
- 7.3.5 Renewable Energy Forecast 225
- 7.3.6 Industrial Applications Forecast 227
- 7.4 Wafer and Material Forecasts 229
- 7.4.1 Si Wafer Market Forecast 229
- 7.4.2 SiC Wafer Market Forecast 231
- 7.4.3 GaN Substrate Market Forecast 233
- 7.5 Regional Forecasts 235
- 7.5.1 China Market Forecast 235
- 7.5.2 Europe Market Forecast 237
- 7.5.3 North America Market Forecast 239
- 7.5.4 Asia-Pacific Market Forecast 241
- 7.6 Price and Cost Forecasts 243
- 7.6.1 Si IGBT vs SiC MOSFET Price Trends 243
- 7.6.2 SiC Cost Reduction Projections 245
- 7.6.3 GaN Device Pricing Outlook 247
Chapter 8: COMPETITIVE LANDSCAPE 249
- 8.1 Market Share Analysis 249
- 8.1.1 Top 20 Power Device Suppliers Ranking 249
- 8.1.2 Market Share by Technology Segment 251
- 8.1.3 Regional Market Share Distribution 253
- 8.2 Competitive Strategies 255
- 8.2.1 Vertical Integration Approaches 255
- 8.2.2 OEM Partnership Models 257
- 8.2.3 Technology Licensing Strategies 259
- 8.3 Mergers, Acquisitions, and Partnerships 261
- 8.3.1 Recent M&A Activity Analysis 261
- 8.3.2 Strategic Partnerships Overview 263
- 8.3.3 Joint Ventures and Collaborations 265
- 8.4 Capacity Expansion Plans 267
- 8.4.1 Si Fab Expansion Projects 267
- 8.4.2 SiC Manufacturing Investments 269
- 8.4.3 GaN Production Scale-up 271
Chapter 9: FUTURE TECHNOLOGY TRENDS 273
- 9.1 Power Electronics 2.0 Vision 273
- 9.1.1 From Converters to Systems 273
- 9.1.2 Energy Management Paradigm 275
- 9.1.3 Smart Grid Integration 277
- 9.2 Device Technology Roadmap 279
- 9.2.1 SiC Technology Evolution 279
- 9.2.2 GaN High-Voltage Development 281
- 9.2.3 Emerging Materials (Ga₂O₃, Diamond) 283
- 9.3 System-Level Innovations 285
- 9.3.1 Integrated Power Electronics Modules 285
- 9.3.2 Multi-Cell and Modular Architectures 287
- 9.3.3 Virtual Prototyping and Digital Twins 289
- 9.4 Passives and EMI Challenges 291
- 9.4.1 Advanced Magnetic Materials 291
- 9.4.2 Capacitor Technology Trends 293
- 9.4.3 EMI Reduction Strategies 295
Chapter 10: STRATEGIC OUTLOOK AND CONCLUSIONS 297
- 10.1 Market Evolution Summary 297
- 10.2 Technology Adoption Timelines 299
- 10.3 Investment Opportunities 301
- 10.4 Risk Factors and Mitigation 303
- 10.5 Key Takeaways and Recommendations 305
Chapter 11: COMPANY PROFILES 307
- 11.1 Semiconductor Device Manufacturers 307 (16 company profiles)
- 11.2 GaN Specialists 371 (11 company profiles)
- 11.3 SiC Wafer and Material Suppliers 411 (6 company profiles)
- 11.4 Tier-1 Automotive Suppliers 435 (10 company profiles)
- 11.5 Automotive OEMs with In-House Development 475 (10 company profiles)
- 11.6 Chinese Power Electronics Companies 515 (9 company profiles)
- 11.7 Module and System Integrators 551 (6 company profiles)
- 11.8 Data Center and Industrial Power 575 (6 company profiles)
- 11.9 Specialty and Emerging Companies 603 (8 company profiles)
APPENDICES 635
- 12.1 Methodology 635
- 12.2 Glossary of Terms 637
- 12.3 Abbreviations 639
- 12.4 Data Sources and References 641
LIST OF TABLES
- Table 1: Global Power Electronics Market Summary 2026-2036 5
- Table 2: Key Market Metrics by Segment 6
- Table 3: Technology Comparison: Si vs SiC vs GaN 8
- Table 4: Regional Market Share Distribution 12
- Table 5: Material Properties Comparison: Si, SiC, GaN 54
- Table 6: SiC MOSFET vs Si IGBT Performance Benchmarks 57
- Table 7: SiC Device Packaging Technologies Comparison 60
- Table 8: 150mm vs 200mm SiC Wafer Cost Advantages 62
- Table 9: GaN HEMT Specifications by Manufacturer 68
- Table 10: GaN Substrate Options and Trade-offs 70
- Table 11: Multi-Cell Converter Advantages and Challenges 76
- Table 12: Thermal Interface Material Properties 88
- Table 13: Single vs Double-Sided Cooling Comparison 86
- Table 14: EV Power Electronics Specifications by OEM 92
- Table 15: Traction Inverter Benchmarking (Si, SiC, GaN) 94
- Table 16: Onboard Charger Power Levels by Vehicle Segment 96
- Table 17: 400V vs 800V Architecture Comparison 100
- Table 18: 800V Platform Adoption by OEM (2022-2025) 102
- Table 19: Heavy-Duty Vehicle Power Electronics Requirements 104
- Table 20: Data Center PSU Efficiency Standards (80 PLUS) 118
- Table 21: AI Server Power Requirements by Generation 120
- Table 22: China Power Electronics Market Size 2026-2036 136
- Table 23: Chinese SiC Wafer Manufacturers Capacity 140
- Table 24: European Power Electronics Regulatory Framework 144
- Table 25: US Semiconductor Manufacturing Incentives 152
- Table 26: Top 10 Si Wafer Suppliers by Revenue 164
- Table 27: SiC Wafer Supplier Market Share Analysis 172
- Table 28: 200mm SiC Wafer Production Timeline by Supplier 176
- Table 29: Vertical Integration: OEM Acquisitions and Partnerships 178
- Table 30: GaN Device Manufacturers and Capacities 182
- Table 31: Die Attach Technologies Comparison 188
- Table 32: Passive Component Technology Roadmap 196
- Table 33: Global Power Electronics Market Forecast (US$ Billion) 204
- Table 34: Market Size by Technology Segment 2026-2036 206
- Table 35: CAGR Comparison by Market Segment 208
- Table 36: Si IGBT Market Forecast by Application 210
- Table 37: SiC MOSFET Market Forecast by Voltage Class 212
- Table 38: GaN Device Market Forecast by Application 214
- Table 39: EV Inverter Forecast: Units, GW, Revenue 218
- Table 40: OBC Market Forecast by Semiconductor Type 220
- Table 41: DC-DC Converter Forecast by Technology 222
- Table 42: Data Center PSU Market Forecast 224
- Table 43: Si Wafer Market Forecast (Munits, US$) 230
- Table 44: SiC Wafer Market Forecast by Diameter 232
- Table 45: Regional Market Forecasts 2026-2036 236
- Table 46: Si IGBT vs SiC MOSFET Price Comparison 244
- Table 47: Cost Assumptions by Device Type (US$/kW) 246
- Table 48: Top 20 Power Device Suppliers 2024 Ranking 250
- Table 49: Market Share by Technology: Si, SiC, GaN 252
- Table 50: SiC MOSFET Suppliers to Leading OEMs 258
- Table 51: Si IGBT Suppliers to Automotive OEMs 260
- Table 52: Recent M&A Transactions in Power Electronics 262
- Table 53: Strategic Partnerships 2023-2025 264
- Table 54: Manufacturing Capacity Expansion Plans 268
- Table 55: Power Electronics 2.0 Key Characteristics 274
- Table 56: SiC Technology Roadmap 2025-2035 280
- Table 57: GaN Voltage Progression Timeline 282
- Table 58: Emerging WBG Materials Comparison 284
- Table 59: Company Profile Summary Matrix 307
- Table 60: Infineon SiC and GaN Portfolio 309
- Table 61: STMicroelectronics OEM Design Wins 313
- Table 62: Tesla Power Electronics Evolution 477
- Table 63: BYD Vertical Integration Structure 481
LIST OF FIGURES
- Figure 1: Global Power Electronics Market Evolution 2026-2036 4
- Figure 2: Technology S-Curve: Evolution of Power Electronics 7
- Figure 3: Market Share Transition: Si to WBG Semiconductors 9
- Figure 4: Regional Market Distribution 2026 vs 2036 11
- Figure 5: Key Market Drivers Influence Diagram 13
- Figure 6: Power Electronics Technology S-Curve Evolution 42
- Figure 7: Paradigm Shift: Power Electronics 1.0 to 2.0 44
- Figure 8: Si IGBT Performance Improvements 1990-2025 46
- Figure 9: Super-Junction Technology Cross-Section 50
- Figure 10: Pareto Front: Si Semiconductor Trade-offs 52
- Figure 11: SiC vs Si Material Properties Comparison 54
- Figure 12: SiC MOSFET Switching Loss Reduction 56
- Figure 13: η-ρ-Pareto Front Analysis 58
- Figure 14: 150mm to 200mm SiC Wafer Die Count Advantage 61
- Figure 15: GaN HEMT Structure Schematic 66
- Figure 16: GaN vs SiC Potential in Inverter Applications 72
- Figure 17: Multi-Cell Converter Basic Concept 76
- Figure 18: Parallel Interleaving Benefits Diagram 77
- Figure 19: Series Interleaving Loss Reduction 78
- Figure 20: R_DS(on) Scaling with Blocking Voltage 80
- Figure 21: VIENNA Rectifier Generation Comparison 82
- Figure 22: Single vs Double-Sided Cooling Schematic 86
- Figure 23: P4 Planar Power Packaging Technology 90
- Figure 24: EV Power Electronics System Architecture 92
- Figure 25: Traction Inverter Power Density Benchmarking 94
- Figure 26: IDTechEx Inverter Benchmarking: Si, SiC, GaN 95
- Figure 27: Onboard Charger Block Diagram 96
- Figure 28: 400V vs 800V Architecture Comparison 100
- Figure 29: 800V Platform Charging Speed Advantages 101
- Figure 30: Power Electronics Integration Levels 102
- Figure 31: Integrated OBC with DC-DC Converter 103
- Figure 32: Smart Grid Energy Control Center Concept 126
- Figure 33: Solid-State Transformer Architecture 128
- Figure 34: Data Center PSU Power Density Trends 118
- Figure 35: AI Server Power Consumption Growth 120
- Figure 36: China EV Market Growth and Power Electronics 136
- Figure 37: Chinese SiC Wafer Production Roadmap 140
- Figure 38: European EV Sales and Regulatory Impact 144
- Figure 39: US Power Electronics Market by Application 150
- Figure 40: Si IGBT Production Flow: Raw Material to EV 166
- Figure 41: SiC MOSFET Production Flow Diagram 174
- Figure 42: 200mm SiC Wafer Production Worldwide 176
- Figure 43: Vertical Integration: Acquisitions Map 178
- Figure 44: GaN vs Si: Die to Vehicle Level Comparison 184
- Figure 45: Power Module Packaging Supply Chain 186
- Figure 46: Silver Sintering vs Solder Reliability 188
- Figure 47: Passive Component Technology S-Curve 194
- Figure 48: Global Power Electronics Market 2026-2036 (US$B) 204
- Figure 49: Power Device Market Split by Technology 206
- Figure 50: Si IGBT Market Trend 2026-2036 210
- Figure 51: SiC MOSFET Market Growth Projection 212
- Figure 52: GaN Device Market Adoption Curve 214
- Figure 53: Inverter Market Share: Si vs SiC vs GaN 2023-2036 216
- Figure 54: EV Inverter Forecast (GW) 218
- Figure 55: OBC Forecast by Semiconductor Type (GW) 220
- Figure 56: DC-DC Converter Forecast (GW) 222
- Figure 57: Inverter, OBC, DC-DC Combined Forecast (US$B) 223
- Figure 58: Data Center PSU Market by Power Level 224
- Figure 59: SiC Wafer Market Forecast by Diameter 232
- Figure 60: Regional Market Comparison 2026 vs 2036 238
- Figure 61: SiC vs Si IGBT Price Trend 2020-2036 244
- Figure 62: Top 20 Power Device Suppliers Market Share 250
- Figure 63: Market Share Evolution: 2020-2024 252
- Figure 64: Chinese Companies Rising Market Presence 254
- Figure 65: Manufacturing Capacity Expansion Map 270
- Figure 66: Power Electronics 2.0 Vision Framework 274
- Figure 67: From Converter to System Analysis 276
- Figure 68: FREEDM Smart Grid Architecture 278
- Figure 69: Virtual Prototyping Design Process Evolution 290
- Figure 70: Research Topics: Components, Converters, Systems 292
- Figure 71: Infineon CoolSiC Product Portfolio 308
- Figure 72: STMicroelectronics ACEPACK Technology 312
- Figure 73: Wolfspeed SiC Manufacturing Roadmap 320
- Figure 74: Tesla Model 3/Y Inverter Architecture 476
- Figure 75: Hyundai E-GMP 800V Platform Diagram 484
- Figure 76: Nvidia Influence on Data Center Power Supply Chain 584
Purchasers will receive the following:
- PDF report download/by email.
- Comprehensive Excel spreadsheet of all data.
- Mid-year Update
Payment methods: Visa, Mastercard, American Express, Paypal, Bank Transfer. To order by Bank Transfer (Invoice) select this option from the payment methods menu after adding to cart, or contact info@futuremarketsinc.com
